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Silicon Drift Detector for X-ray spectroscopy

Written by Super User on . Posted in S

VITUS SDD - Silicon Drift Detector 

Silicon Drift Detector

Features

  • Energy resolution down to 123eV FWHM at Mn-Kα
  • Excellent peak-to-background
  • Operable at an ambient temperature of up to +80°C with excellent performance
  • High count rate capability up to 1,000kcps
  • Efficient integrated Peltier element
  • No liquid nitrogen cooling required
  • Radiation hardness during more than 10 years standard count rate exposure
  • Easy to use
  • Easy to use
  • Active areas from 7mm² to 100mm² available

KETEK's VITUS Silicon Drift Detectors (SDD) are the state-of-the-art X-ray detectors based on silicon substrate. Their typical X-ray energy range is between 0.2keV and 30keV. They are used in applications such as EDX, EDS, XRF, TXRF in bench top as well as in handheld based systems. Due to their wide operating temperature range they are especially suited for industrial and automotive applications.

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